Switching Magnetic Layers with a current 

Spin@RTresults Make Cover of Applied Physics Letters

The phenomenon of spin transfer attracts a great deal of attention because of potential device applications and interesting physics involved. For instance, the spin transfer switching was proposed as an alternative method to switch magnetization in magnetic memories based on spin valves and magnetic tunnel junctions (e.g., MRAM). Furthermore, the spin transfer precession in low fields is important for practical applications in high-frequency devices. In this paper, 3-D focused ion beam lithography for the study of spin transfer switching and precession is demonstrated. The nanopillar devices have successfully shown the spin transfer torque switching and low-field peak structures consistent spin transfer precession at room temperature. The technique provides a convenient and reliable method to fabricate devices for the investigation of the spin transfer torque effects in magnetic thin films.